| AVS 51st International Symposium | |
| Semiconductors | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| SC-TuP1 Epitaxial Growth of GaN on Sapphire by RF-MOMBE S.Y. Kuo, C.C. Kei, National Science Council, Taiwan, C.K. Chao, National Central University, Taiwan, J.S. Chen, National Science Council, Taiwan, S.Y. Huang, National Taiwan University, Taiwan, C.N. Hsiao, National Science Council, Taiwan |
| SC-TuP2 Comparison of Ga- and N-polar GaN Surfaces R.P. Bhatta, B.D. Thoms, Georgia State University, C.R. Eddy, Jr., R.T. Holm, R.L. Henry, Naval Research Laboratory |
| SC-TuP3 Ohmic Contacts to AlGaN S.E. Mohney, H.J. Wang, M.A. Horsey, The Pennsylvania State University, B.A. Hull, Cree, Inc. |
| SC-TuP4 Fabrication and Properties of Thin Film Photon Sieve Diffractive Lens N. Bradman, H. Chung, M. Davidson, P.H. Holloway, K. Woo, D. Tanner, S. Selcuk, A. Hebard, University of Florida, O. Shenderova, A. Shenderova, G.E. McGuire, International Technology Center |
| SC-TuP5 Etch Characteristics of Sapphire using Inductively Coupled Plasmas Y.J. Sung, T. Jang, K.K. Choi, S.H. Chae, Y.H. Kim, J.S. Kwak, O.H. Nam, Y. Park, Samsung Advanced Institute of Technology, South Korea |
| SC-TuP6 Exact-Exchange-Based Quasiparticle Calculations of II-VI Compounds and Group III Nitrides P. Rinke, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Germany, A. Qteish, Yarmouk University, Jordan, J. Neugebauer, University of Paderborn, Germany, M. Scheffler, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Germany |
| SC-TuP7 Transparent Conducting Oxides Based on ZnO by Reactive Sputtering M.A. Santana-Aranda, Instituto Mexicano del Petroleo, México, M. Meléndez-Lira, M. Becerril-Silva, S.J. Jiménez-Sandoval, Centro de Investigación y Estudios Avanzados, México |
| SC-TuP8 XPS and UPS Study of ZnO:N Thin Films C.L. Perkins, National Renewable Energy Laboratory, X. Li, University of Texas at Arlington, S. Asher, T.J. Coutts, S.-H. Lee, National Renewable Energy Laboratory |
| SC-TuP9 Electrical Characteristics of Al-doped ZnO (Al-ZnO) Films and their Application to Al-ZnO/p-Si Solar Cells T. Ichinohe, S. Masaki, Tokyo National College of Technology, Japan, K. Kawasaki, TDY Co., Ltd., Japan |
| SC-TuP10 Supermagnetron Plasma CVD of Amorphous CNx:H Films Using Rf Power-Ratio Control H. Kinoshita, R. Ikuta, K. Sakurai, Shizuoka University, Japan |