AVS 51st International Symposium
    Semiconductors Tuesday Sessions
       Session SC-TuP

Paper SC-TuP1
Epitaxial Growth of GaN on Sapphire by RF-MOMBE

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: C.N. Hsiao, National Science Council, Taiwan
Authors: S.Y. Kuo, National Science Council, Taiwan
C.C. Kei, National Science Council, Taiwan
C.K. Chao, National Central University, Taiwan
J.S. Chen, National Science Council, Taiwan
S.Y. Huang, National Taiwan University, Taiwan
C.N. Hsiao, National Science Council, Taiwan
Correspondent: Click to Email
A self-designed radio-frequency plasma metal organic molecular beam epitaxy (RF-MOMBE) system is developed to study III-nitride semiconductors. The surface morphologies and crystal structures were monitored by in-situ reflection high energy electron diffraction (RHEED). Up to 4 inches substrates of sapphire, silicon and other materials were available. Followed by substrate nitridation, a low temperature buffer layer was deposited to facilitate growth of III-nitride films on large lattice mismatched substrates. The III-nitride films were characterized by photoluminescence spectrometry, x-ray diffraction, scanning electron microscopy and transmission electron microscopy. The effect of growth temperature and III-V ratio on crystallinity and surface morphologies of III-nitride films was prominent. High quality III-nitride films were achieved by well optimized condition.