| AVS 51st International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS1-MoM1 Etching of SiC and SiCN with Tetrafluoroethane/Oxygen Reactive Plasma H.C. Galloway, Texas State University, K.P. Radican, Trinity College Dublin, Ireland, J.M. McDonald, C. Martinez, D. Donnelly, D.C. Koeck, Texas State University |
| 8:40am | PS1-MoM2 Investigation of Fundamental Etching Reaction of Organic Low Dielectric Film Using Ion Beams with Radical Injection M. Yuuhei, H. Masaru, G. Toshio, Nagoya University, Japan, A. Atsuhiro, T. Tetsuya, Sony Co, Japan |
| 9:00am | PS1-MoM3 Fluorocarbon Surface Chemistry in Dual Frequency Capacitively Coupled Discharges for Dielectric Etching: A Comparison with Inductively Coupled Plasmas L. Ling, X. Hua, L. Zheng, G. Oehrlein, University of Maryland at College Park, E.A. Hudson, Lam Research Corp., P. Jiang, Texas Instruments Inc., P. Lazzeri, M. Anderle, ITC-irst, Italy, Y. Wang, National Institute of Standards and Technology |
| 9:20am | PS1-MoM4 Low-k and Porous Low-k Sidewall Roughening: Fluorocarbon Plasma and Beam Measurements Y. Yin, S.A. Rasgon, H.H. Sawin, Massachusetts Institute of Technology |
| 9:40am | PS1-MoM5 The Effects of Pore Morphology on the Diffusive Properties of a Porous Low-K Dielectric E.A. Joseph, M.J. Goeckner, L.J. Overzet, University of Texas at Dallas, D.W. Gidley, University of Michigan, B.E.E. Kastenmeier, IBM/International Sematech |
| 10:00am | PS1-MoM6 Using In-vacuo Electron-Spin-Resonance and Infrared Spectroscopy Technique in the Analysis of Surface Reactions of Low-k films during/after Plasma Processes K. Ishikawa, Tohoku University, Japan, Y. Yamazaki, S. Yamasaki, AIST, Japan, T. Ozaki, Y. Ishikawa, S. Noda, S. Samukawa, Tohoku University, Japan |
| 10:20am | PS1-MoM7 Minimizing low-k Damage during In-situ Photoresist Strip E.A. Hudson, T. Choi, O. Turmel, L. Zheng, K. Takeshita, S. Lee, P. Cirigliano, Lam Research Corp. |
| 10:40am | PS1-MoM8 Comparison of In-situ and Ex-situ Resist Strip Process for Ultra Low-k/ Cu Interconnect H. Xu, A. Shen, V. Tarasov, ULVAC Technologies, B. White, J. Wolf, International Sematech |
| 11:00am | PS1-MoM9 Impact of Different Ashing Plasmas on Porous and Dense SiOCH T. Chevolleau, LTM-CNRS, France, N. Posseme, STMicroelectronics, France, T. David, O. Joubert, CNRS/LTM, France, O. Louveau, STMicroelectronics, France, D. Louis, CEA-LETI, France |
| 11:20am | PS1-MoM10 Analysis of Ash-Induced Modification of Porous Organosilicate Glass Inter-Level Dielectric Materials on Patterned Structures Utilizing Electron Energy Loss Spectroscopy and Angular Resolved XPS N.C.M. Fuller, T.J. Dalton, IBM TJ Watson Research Center, C. Labelle, Advanced Micro Devices Inc., M.A. Worsley, IBM TJ Watson Research Center, Stanford University, D. Dunn, T.S.L. Tai, IBM Microelectronics Division |
| 11:40am | PS1-MoM11 Highly Selective Etching of Si@sub 3@N@sub 4@ to SiOC by Precise Ion Energy Control for sub-90 nm Dual Damascene Formation H. Hayashi, A. Kojima, A. Takase, K. Yamamoto, I. Sakai, T. Ohiwa, Toshiba Corporation, Japan |