AVS 51st International Symposium
    Plasma Science and Technology Monday Sessions
       Session PS1-MoM

Paper PS1-MoM10
Analysis of Ash-Induced Modification of Porous Organosilicate Glass Inter-Level Dielectric Materials on Patterned Structures Utilizing Electron Energy Loss Spectroscopy and Angular Resolved XPS

Monday, November 15, 2004, 11:20 am, Room 213A

Session: Low-k Dielectric Etching
Presenter: N.C.M. Fuller, IBM TJ Watson Research Center
Authors: N.C.M. Fuller, IBM TJ Watson Research Center
T.J. Dalton, IBM TJ Watson Research Center
C. Labelle, Advanced Micro Devices Inc.
M.A. Worsley, IBM TJ Watson Research Center, Stanford University
D. Dunn, IBM Microelectronics Division
T.S.L. Tai, IBM Microelectronics Division
Correspondent: Click to Email
We have previously illustrated the need for analyzing patterned structures versus blanket wafers to effectively understand the dominant mechanism(s) effecting inter-level dielectric (ILD) modification during photoresist removal for damascene processing. The evolution of CMOS technology to maintain the ITRS roadmap potentially demands the introduction of porous (OSG or SiCOH)-based materials which are even more susceptible to ash-induced modification than their dense counterparts; as a consequence, the demand not only for finding a suitable ash solution (for specific integration schemes), but also for completely understanding the dominant mechanism(s) that modify these porous films is quite critical. Work to date by these authors has concentrated on analyzing ash-exposed ILD surfaces via electron energy loss spectroscopy (EELS) and examining the chemical changes in the surface as a function of ash chemistry/conditions. This work will summarize recent efforts aimed at further unraveling the mechanism(s) that influence the modification of relevant porous OSG-based ILD materials via the use of both EELS and the more sensitive angular resolved XPS (AR XPS) on both 200mm and 300mm patterned wafers. Relevant results will be presented.