| AVS 51st International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS1-MoA1 Quantitative Plasma Beam Investigation of Polysilicon Sidewall Roughening S.A. Rasgon, Y. Yin, H.H. Sawin, Massachusetts Institute of Technology |
| 2:20pm | PS1-MoA2 3-Dimensional Feature Scale Simulation of Polysilicon Sidewall Roughening H. Kawai, W. Jin, H.H. Sawin, MIT |
| 2:40pm | PS1-MoA3 Invited Paper Unraveling the Complex Process Known as 'Plasma Chemistry' M.J. Goeckner, University of Texas at Dallas |
| 3:20pm | PS1-MoA5 Stabilization of Radical Composition Drift in Fluorocarbon Plasmas K. Nakamura, Chubu University, Japan, H. Sugai, Nagoya University, Japan, K. Oshima, A. Ando, T. Tatsumi, Sony, Japan |
| 3:40pm | PS1-MoA6 Etching of Passivated SiO@sub 2@ Film by Fluorocarbon Ions: A Molecular Dynamics Study V. Smirnov, A. Stengatch, V. Pavlovsky, Sarov Labs., Russia, S. Rauf, P. Stout, P.L.G. Ventzek, Freescale Semiconductor |
| 4:00pm | PS1-MoA7 Spontaneous Etching of Silicon with F Atoms and XeF@sub 2@: A Unified Model H.F. Winters, D. Humbird, D.B. Graves, UC Berkeley |
| 4:20pm | PS1-MoA8 Real-time Spectroscopic Studies of Si Etch Dynamics A.A.E. Stevens, J.J.H. Gielis, M.C.M. van de Sanden, H.C.W. Beijerinck, W.M.M. Kessels, Eindhoven University of Technology, The Netherlands |
| 4:40pm | PS1-MoA9 Insights into the Ion Energy Dependence of Ion-Assisted Chemical Etch Rates in High-Density Plasmas L. Stafford, J. Margot, Universite de Montreal, Canada, M. Chaker, INRS-Energie, Canada, S.J. Pearton, University of Florida |
| 5:00pm | PS1-MoA10 A Model of Multilayer Surface Reactions and Simulation of the Feature Profile Evolution in Etching of Silicon in Chlorine Plasmas Y. Osano, K. Ono, Kyoto University, Japan |