AVS 51st International Symposium
    Plasma Science and Technology Monday Sessions
       Session PS1-MoA

Invited Paper PS1-MoA3
Unraveling the Complex Process Known as 'Plasma Chemistry'

Monday, November 15, 2004, 2:40 pm, Room 213A

Session: Plasma Surface Interactions in Etching
Presenter: M.J. Goeckner, University of Texas at Dallas
Correspondent: Click to Email

'Plasma chemistry' is perhaps one of the most complex processes known. In general it can be thought of as the interaction between three main scientific subsystem, plasma physics, gas-phase chemistry/physics and surface-phase chemistry/physics. To understand this complexity one simply needs to consider how a given reactive gas-phase specie might interact with a surface. Does it stick to the surface? Does it chemically react with the surface? Does it promote film growth? How does this interaction change the gas composition? How does an altered gas-phase chemistry alter the plasma? Understanding these interactions is key to producing better models of plasmas, allowing the optimization of complete process systems and hence improved product yield. This talk will briefly review how various groups are attacking this complex problem. Then using our fluorocarbon chemistries (CF@sub 4@, C@sub 4@F@sub 8@) studies as an example, we examine how gas and surface chemistries change for different wall conditions (temperature, diameter and material) as well as gas flows and plasma parameters. Based on this knowledge, we will discuss possible interaction mechanisms and how these might affect the process. This will in turn lead to a discussion of possible future studies. This work is supported by a grant from NSF/DOE, CTS-0078669.