AVS 51st International Symposium
    Plasma Science and Technology Thursday Sessions

Session PS-ThA
Plasma-Surface Interaction

Thursday, November 18, 2004, 2:00 pm, Room 213A
Moderator: G.F. Franz, University of Applied Sciences, Germany


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm PS-ThA1
A Comprehensive Study of Gas Phase and Plasma-Surface Interactions of Depositing Fluorocarbon Plasma Systems
I.T. Martin, E.R. Fisher, Colorado State University
2:20pm PS-ThA2
Mechanisms of Etching in the Presence of Depositing Species: Molecular Dynamics Simulations of Silicon Etching in Fluorocarbon Plasmas
J.J. Vegh, D. Humbird, D.B. Graves, University of California, Berkeley
2:40pm PS-ThA3
Deposition and Composition of Polymer Films in Fluorocarbon Plasmas: CW and Pulsed Systems@footnote 1@
K. Rajaraman, M.J. Kushner, University of Illinois at Urbana-Champaign
3:00pm PS-ThA4 Invited Paper
Dangling Bond Creation and Annihilation during Plasma Processes Studied by In-situ ESR Technique
S. Yamasaki, AIST, Japan, K. Ishikawa, Tohoku University, Japan
3:40pm PS-ThA6
NH@sub x@ Radical Densities and Plasma Chemistry in a Remote Ar-NH@sub 3@-SiH@sub 4@ Plasma for Silicon Nitride Deposition
P.J. van den Oever, J.H. van Helden, R. Engeln, D.C. Schram, M.C.M. van de Sanden, W.M.M. Kessels, Eindhoven University of Technology, The Netherlands
4:00pm PS-ThA7
First-Principles Analysis of Precursor-Surface Interactions Relevant to Plasma Deposition of Silicon Thin Films
T. Bakos, D. Maroudas, University of Massachusetts
4:20pm PS-ThA8
Uniformity Study in Large-Area Showerhead Reactors
R. Sobbia, L. Sansonnens, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland, J. Bondkowski, UNAXIS France SA, France
4:40pm PS-ThA9
Validity of Binary Collision Theory in Ion-Surface Interactions at 50-500 eV
M. Gordon, K.P. Giapis, California Institute of Technology
5:00pm PS-ThA10
Molecular Dynamics Simulation for Physical Sputtering and Deposition of Pt and Au Films
K. Ito, Kyoto University, Japan, H. Yamada, National Institute of Advanced Industrial Science and Technology (AIST), Japan, S.H. Hamaguchi, Osaka University, Japan