AVS 51st International Symposium
    Plasma Science and Technology Thursday Sessions
       Session PS-ThA

Invited Paper PS-ThA4
Dangling Bond Creation and Annihilation during Plasma Processes Studied by In-situ ESR Technique

Thursday, November 18, 2004, 3:00 pm, Room 213A

Session: Plasma-Surface Interaction
Presenter: S. Yamasaki, AIST, Japan
Authors: S. Yamasaki, AIST, Japan
K. Ishikawa, Tohoku University, Japan
Correspondent: Click to Email
To understand the surface chemical reactions of plasma processes, various probes have been introduced for monitoring. Defect creation and annihilation during plasma processes, whether at surface or in bulk, play an essential role in determining final device performances and chemical reactions. If one can directly observe the creation and annihilation of dangling bond (db) centers and those dynamic changes of bonding configurations during plasma processes in real-time, it will give important information for improvement of plasma processes. In this talk we introduce in-situ ESR measurements [1,2], detecting surface defects during H2 and Ar plasma treatments on hydrogenated amorphous silicon (a-Si:H) and in-line ESR measurements during fluorocarbon gas etching processes of SiO2. From these experimental results we report how the plasma species affect surface defect structure and discuss the surface chemical reactions. [1] K. Ishikawa, et al., Appl. Phys. Lett. 81, 1773 (2002). [2] S. Yamasaki, et al., Appl. Phys. Lett. 70, 1137 (1997).