| AVS 51st International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 1:20pm | PS+MS-TuA1 Preliminary Investigations for Ultimate Gate Patterning E. Pargon, LTM-CNRS, France, J. Foucher, CEA-LETI, France, J. Thiault, O. Joubert, LTM-CNRS, France |
| 1:40pm | PS+MS-TuA2 EUV Light Source Development and Debris Mitigation For 45nm Node Lithography and Beyond B.E. Jurczyk, M.A. Jaworski, M.J. Neumann, M.J. Williams, D.N. Ruzic, University of Illinois at Urbana-Champaign |
| 2:00pm | PS+MS-TuA3 Invited Paper Fundamental Studies on Low-k Processing T. Tatsumi, Sony Corporation, Japan |
| 2:40pm | PS+MS-TuA5 Invited Paper Plasma Etch Challenges for 45 nm Node and Beyond R. Wise, IBM |
| 3:20pm | PS+MS-TuA7 Invited Panel - "Challenges for 45 nm Node" C. Gabriel, AMD (damage), M. Hussein, Intel (scaling), C.-J. Kang, Samsung (dielectric etch), S. Wege, Infineon (silicon etch) |
| 3:40pm | PS+MS-TuA8 Discussion - "Challenges for 45 nm Node" Panelists and Attendees |