Many novel technologies are candidates for introduction at the 45 nm technology node. Metal gate electrodes, high-k gate dielectric materials, hybrid oriented transistors (HOT), FINFET transistors, new silicide materials, multiple stressed liners, fully-silicided gates, and porous low-k BEOL materials are all currently under evaluation for introduction at the 45 nm node. The anticipated impact of each of these technology components on requirements of dry etch process and tooling is discussed in detail. Lithographic limitations will continue to require dry etch processes (e.g. gate, contact) to provide additional CD reduction to meet designed groundrules. These processes will include extension of well-known resist trim techniques as well as other techniques, such as providing a controllable taper through a sacrificial masking material. Available resist material will be reduced both by limitations of the lithographic process window (N.A , DOF, resolution ) as well as implementation of multiple exposure techniques. These reductions in the available mask thickness required to preserve lithography process window have driven the need for highly selective etch processes, generally at the expense of uniformity (especially on 300 mm wafer sizes), defectivity, and profile of the transferred pattern. Later generation lithographic materials are expected to continue to exhibit increased sensitivity to line edge roughness. Process and tooling needs required to address these lithographic challenges are discussed.