AVS 51st International Symposium | |
Manufacturing Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
MS-TuP1 Reactive Preclean H@sub 2@/He Plasma Prior Copper Deposition, Investigation on the First Wafer Effect and Multivariable Advanced Process Control R. Petri, L. Bucelle, STMicroelectronics, France |
MS-TuP2 A New Way to Get Steady Trichlorosilane (TCS) Vapor Flow for EPI Deposition Process A. Sidhwa, Z. Lu, S. Bansal, STMicroelectronics, Inc, C. Cross, STMicroelectronics, Inc. |
MS-TuP3 The Evaluation of a Twin Wire Arc Spray (TWAS) Process for Coated Shields used in Soft-Sputter Etch Pre-Clean Chambers A. Sidhwa, M. Goulding, M. Kalaga, X. Breurec, R. Pierce, T. Gandy, STMicroelectronics, Inc |
MS-TuP4 Two Gas Reactive Sputtering of Oxynitride Compounds: Model and Practice D.C. Carter, D.J. Christie, W.D. Sproul, Advanced Energy Industries, Inc. |
MS-TuP5 Hard Mask Dual Damascene Integration Scheme for 65nm G.A. Delgadino, T.P. Pender, M. Le, S. Li, L.Q. Xia, Y. Ye, Applied Materials, Inc. |
MS-TuP6 Integration of an Ultra Low-k Dielectric in a 300mm 130nm Trench First Dual Damascene Etch Process R. McGowan, P.J. Wolf, International Sematech, D. Wang, Tokyo Electron America, Inc. |
MS-TuP7 Effect of Double Polishing Pad on the Shallow Trench Isolation¬Chemical Mechanical Polishing (STI-CMP) Process Y.J. Seo, S.W. Park, DAEBUL University, South Korea, W.S. Lee, Chosun University, South Korea, S.Y. Kim, Dongbu-Anam Semiconductor Co. Inc., South Korea |
MS-TuP8 Effects of Slurry Temperature on the Oxide-CMP Performance W.S. Lee, T.W. Kim, Chosun University, South Korea, Y.J. Seo, DAEBUL University, South Korea |
MS-TuP9 Impact of Reconditioned PVD Shielding on Process Yield D.J. Zuck, G.H. Leggett, D.S. Zuck, QuantumClean |
MS-TuP10 Silicon Isotope Enrichment by IRMPD of Si@sub 2@F@sub 6@: A Method for High-Efficiency Enrichment of @super 28@Si by Two-Color CO@sub 2@ Laser Irradiation H. Ohba, A. Yokoyama, M. Hashimoto, K. Katsumata, H. Akagi, Japan Atomic Energy Research Institute, Japan, S. Arai, Hill Research Corporation, Japan |
MS-TuP11 Silicon Isotope Enrichment by IRMPD of Si@sub 2@F@sub 6@: Development of Continuous Silicon Isotope Enrichment Technique for Large-Scale Production K. Katsumata, H. Ohba, H. Akagi, A. Yokoyama, Japan Atomic Energy Research Institute, S. Arai, Hill Research Corporation, Japan |
MS-TuP12 Field Emission Enhanced Semiconductor Thermoelectric Cooler B.L. Weiss, P.H. Cutler, N.M. Miskovsky, The Pennsylvania State University, M. Chung, University of Ulsan, South Korea, N. Kumar, UHV Technologies |