| AVS 51st International Symposium | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:40am | EM-TuM2 Near-Surface Defects and Schottky Barrier Formation at Au/ZnO(000-1) Interfaces H.L. Mosbacker, Y.M. Strzhemechny, P.E. Smith, B.D. White, The Ohio State University, D.C. Look, Wright State University, L.J. Brillson, The Ohio State University |
| 9:00am | EM-TuM3 Invited Paper Investigation of the Sources of Variations in the Electrical Characteristics of Ohmic and Rectifying Contacts L.M. Porter, F.A. Mohammad, D.J. Ewing, Carnegie Mellon University, R.R. Ciechonski, M. Syväjärvi, R. Yakimova, Linköping University, Sweden |
| 9:40am | EM-TuM5 Simultaneous Formation of p- and n-type Ohmic Contacts to 4H-SiC using Ni/Ti/Al Contact Materials S. Tsukimoto, T. Sakai, M. Murakami, Kyoto University, Japan |
| 10:00am | EM-TuM6 Fabrication, Processing and Specific Contact Resistance Measurements of Contacts to Semiconductor Nanowires S. Dey, Y. Wang, K.-K. Lew, T.S. Mayer, J.M. Redwing, S.E. Mohney, The Pennsylvania State University |
| 10:20am | EM-TuM7 Invited Paper CMOS Metal Gate Implementation C. Cabral, Jr., V. Narayanan, J. Kedzierski, M. Copel, C. Lavoie, J.L. Jordan-Sweet, E.P. Gusev, IBM T.J. Watson Research Center, J.M.E. Harper, University of New Hampshire |
| 11:00am | EM-TuM9 Physical and Electrical Properties of Mo@sub X@ N@sub Y@ and Mo@sub X@ Si@sub Y@ N@sub Z@ as Gate Electrode Materials for MOS Devices. R.M. Wallace, P. Zhao, P. Sivasubramani, I.S. Jeon, University of Texas at Dallas, J. Lee, J.Y. Kim, Kookmin University, Korea, M. Kim, B.E. Gnade, University of Texas at Dallas |
| 11:20am | EM-TuM10 Influence of Interactions Between Ta-N Films and Low Dielectric Constant Materials on the Stability of Copper Interconnection C.-C. Chang, National Cheng Kung University, Taiwan, S.-K. JangJian, Taiwan Semiconductor Manufacturing Company, Taiwan, J.-S. Chen, National Cheng Kung University, Taiwan |
| 11:40am | EM-TuM11 Low Resistivity Germanides S. Gaudet, Ecole Polytechnique de Montreal, Canada, C. Lavoie, IBM T.J. Watson Research Center, C. Detavernier, University of Ghent, Belgium, P. Desjardins, Ecole Polytechnique de Montreal, Canada |