AVS 51st International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuM

Paper EM-TuM9
Physical and Electrical Properties of Mo@sub X@ N@sub Y@ and Mo@sub X@ Si@sub Y@ N@sub Z@ as Gate Electrode Materials for MOS Devices.

Tuesday, November 16, 2004, 11:00 am, Room 304B

Session: Contacts and Metallization
Presenter: P. Zhao, University of Texas at Dallas
Authors: R.M. Wallace, University of Texas at Dallas
P. Zhao, University of Texas at Dallas
P. Sivasubramani, University of Texas at Dallas
I.S. Jeon, University of Texas at Dallas
J. Lee, Kookmin University, Korea
J.Y. Kim, Kookmin University, Korea
M. Kim, University of Texas at Dallas
B.E. Gnade, University of Texas at Dallas
Correspondent: Click to Email
Continued CMOS scaling requires high-k dielectrics and advanced metal gate electrodes in the gate stack. The work function of Mo has been reported to be controlled with N@super +@ implantation.@footnote 1@. The use of amorphous ternary M-Si-N (M=Ta, Mo, W) as a diffusion barrier for Al or Cu metallization has been previously studied,@footnote 2 and 3@ and TaSi@sub X@ N@sub Y@ as a metal gate electrode candidate has been recently reported.@footnote 4@. In this study, the work function and thermal stability of Mo(N) and MoSi(N) deposited by reactive sputtering with different N@sub 2@/Ar ratios and with different nitrogen implantation doses were investigated. The defects and trapped charges in the interface were also analyzed using CV and IV measurements at different temperatures. XPS, XRD, RBS, TEM, CV and IV results will be presented. Our results indicate that Mo(N) and MoSi(N) are potential CMOS gate candidates. This work is supported by the Texas Advanced Technology Program.} $Footnotes {@footnote 1@ Rushkar Ranade, Hideki Takeuchi, Tsu-jae King and Chenming Hu, Electrochemical and Solid-State letters, 4 (11) G85-G87 (2001). @footnote 2@ J. S. Reid, E. Kolawa, R. P. Ruiz and M.-A. Nicolet, Thin Solid Film, 236, 319 (1993). @footnote 3@ J. S. Reid, E. Kolawa, R. P. Ruiz and M.-A. Nicolet, F. Cardone, D. Gupta and R. P. Ruiz, Journal of Applied physics, 79, 1109 (1996). @footnote 4@ You-Seok Suh, Greg P. Heuss, Jae-Hoon Lee, and Veena Misra, IEEE Electron Device Letters, 24, 439 (2003).