| AVS 51st International Symposium | |
| Electronic Materials and Processing | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| EM-MoP1 Oxidation of Epitaxial Al/Si(111) for Improved Josephson Tunnel Junctions D.A. Hite, R. McDermott, R.W. Simmonds, K.B. Cooper, M. Steffen, S. Oh, S. Nam, J.M. Martinis, D.P. Pappas, NIST |
| EM-MoP2 Nickel Silicide Formation and Strain Relaxation of SiGe Layers during Rapid Thermal Annealing of Ni/cap-Si/Si0.83Ge0.17/Si(001) Structure C.H. Jang, Sungkyunkwan University, South Korea, Y.W. Kim, Seoul National University, Korea, M.R. Sardela Jr., University of Illinois at Urbana-Champaign, Y.J. Song, K.-H. Shim, Electronics and Telecommunications Research Institute, Korea, N.-E. Lee, Sungkyunkwan University, South Korea |
| EM-MoP3 The Change of Microstructures in SiGe Film Grown on (001) Si Substrate using Solid Phase Epitaxy S.G. Kim, ETRI, South Korea |
| EM-MoP4 Investigation of Thermal Stability of Strained Si on Relaxed SiGe Layer C.H. Jang, J.W. Lee, C.W. Yang, Sungkyunkwan University, South Korea, M.R. Sardela Jr., University of Illinois at Urbana-Champaign, Y.J. Song, K.-H. Shim, Electronics and Telecommunications Research Institute, Korea, N.-E. Lee, Sungkyunkwan University, South Korea |
| EM-MoP5 Application of IR Variable Angle Spectroscopic Ellipsometry to the Determination of Free Carrier Concentration in n@super ++@ Germanium D.W. Thompson, N.J. Ianno, K. Zhou, University of Nebraska-Lincoln |
| EM-MoP6 Study on the Enhancement of the Etch Selectivity of Photoresist for Next Generation Lithography C.H. Shin, J.Y. Yun, G.J. Min, C.J. Kang, H.K. Cho, J.-T. Moon, Samsung Electronics Co. Ltd., Korea |
| EM-MoP7 Inductively Coupled Plasma Etching of Nano-Sized Magnetic Tunnel Junction Stack for MRAM Fabrication S.W. Hwang, S.J. Jung, T.W. Kim, D.J. Ma, Samsung Advanced Institute of Technology, South Korea |
| EM-MoP8 Influence of Molybdenum on the Whisker Formation of Al Film C.F. Lo, D. Draper, P. McDonald, P. Gilman, Praxair Electronics |
| EM-MoP9 Change of Structural and Electrical Properties due to Phase Transition of Ge@sub 2@Sb@sub 2@Te@sub 5@ Y.K. Kim, S.A. Park, J.H. Beack, M.K. Noh, K.H. Jeong, E.J. Jeong, D.-H. Ko, Yonsei University, Korea, M.-H. Cho, Korea Research Institute of Standards and Science, Korea |
| EM-MoP10 On the Surface Morphology of CdTe Thin Films Evaporated onto Rotating Substrates G.G. Rusu, M. Rusu, Al.I. Cuza University, Romania |
| EM-MoP11 Future Super Conducting MeB@sub 2@ Materials I. Arvidssson, A. Pallas, K. Larsson, Uppsala University, Sweden |
| EM-MoP12 Optical properties of Zn@sub1-x@Mn@subx@S epilayers by Spectroscopic Ellipsometry D.-J. Kim, S.-H. Eom, Y.-M. Yu, Y.D. Choi, Mokwon University, Korea, M.-Y. Yoon, Joongbu University, Korea, I.-H. Choi, Chung-Ang University, Korea |
| EM-MoP13 Effect of Mn Composition on Characterization of Zn@sub1-x@Mn@subx@S Epilayers Y.-M. Yu, D.-J. Kim, S.-H. Eom, Mokwon University, Korea, K.-S. Lee, T.-H. Kim, Chungnam National University, Korea, Y.D. Choi, Mokwon University, Korea |