SiGe films grown on Si substrate have a great interest for the application in high performance heterojunction bipolar transistors. In this system, study on the growth behavior and the microstructure is very important for the growth of defect-free SiGe film. In this work, we have investigated the growth behavior and the microstructure change of SiGe film on Si substrate grown by solid phase epitaxy (SPE) method. Amorphous Si1-xGex (x=0.2, x=0.35, x=0.5) films(~150nm) were deposited on (001) Si substrate by molecular beam epitaxy method and then crystallized (i.e SPE) at various anneal temperatures. These films were analyzed using glancing angle X-ray diffraction and transmission electron microscopy (TEM). For the Si0.8Ge0.2 sample annealed at 550â"f for 30 min, SiGe film was found to be amorphous. Single crystal SiGe film (~30 nm) with defects were formed in the sample annealed at 650â"f for 10 min, but very small amount of polycrystalline and amorphous SiGe layers still remained above the SiGe single crystalline layer. The preferred growth direction of polycrystalline SiGe layer was (111). For the Si0.8Ge0.2 film annealed at 750â"f for 10min, single crystalline SiGe layers was developed near SiGe/Si interface, and above the single crystalline layer, polycrystalline SiGe layer was formed with preferred growth direction of (220). For the Si1-xGex film with x>0.2, similar microstructure was formed but preferred growth direction changes with anneal temperature from (111) to (311) instead of (220).