AVS 51st International Symposium
    Electronic Materials and Processing Monday Sessions
       Session EM-MoP

Paper EM-MoP6
Study on the Enhancement of the Etch Selectivity of Photoresist for Next Generation Lithography

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: C.H. Shin, Samsung Electronics Co. Ltd., Korea
Authors: C.H. Shin, Samsung Electronics Co. Ltd., Korea
J.Y. Yun, Samsung Electronics Co. Ltd., Korea
G.J. Min, Samsung Electronics Co. Ltd., Korea
C.J. Kang, Samsung Electronics Co. Ltd., Korea
H.K. Cho, Samsung Electronics Co. Ltd., Korea
J.-T. Moon, Samsung Electronics Co. Ltd., Korea
Correspondent: Click to Email
As device feature size shrinks to sub 100nm, process applications using 193nm ArF lithography are being increased in the semiconductor industry. However, as the resolution of photoresist increases, carbon ratio and phenyl group in the resist structure decrease (Ohnish parameter increases), with the reduction of dry etch resistance. Moreover, as industry turns to the NGL such as F@sub 2@ and immersion ArF for sub-70nm patterning, limitations in the fabrication of patterning using NGL lie in both decreased physical thickness of photoresist below 2000Å and reduced hardness of materials. Dry etch resistances of immersion ArF and F@sub 2@ photoresist were evaluated in line and space pattern. Etching was performed in the commercially available dual frequency plasma using O@sub 2@, Ar, CF@sub 4@, CHF@sub 3@ and CH@sub 2@F@sub 2@ gas chemistries. It was found that dry etch resistances of NGL photoresist were weaker compared to the commercial ArF photoresist. Novel techniques forming a protective layer on photoresist will be discussed in this paper in order to improve dry etch resistance of new resist together with the enhancement of etch selectivity.