| AVS 51st International Symposium | |
| Dielectrics | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| DI-MoP1 Surface Preparation for Atomic Layer Deposition of High-K Oxides on Silicon Studied by XPS and SPM J.M. Sturm, A.I. Zinine, H. Wormeester, R.G. Bankras, J. Holleman, J. Schmitz, B. Poelsema, University of Twente, The Netherlands |
| DI-MoP2 Orientation Selective Epitaxy of CeO@sub 2@ Thin Films on Si(100) Substrates by Magnetron Reactive Sputtering Enhanced by Oxygen Radical Beams with Substrate Bias T. Inoue, M.O. Ohashi, N. Sakamoto, S. Shida, Iwaki Meisei University, Japan, T.W. Chiu, K. Yamabe, University of Tsukuba, Japan |
| DI-MoP3 Characteristics of Mo@sub x@Si@sub y@ Gate Electrodes for Advanced CMOS Applications P. Sivasubramani, P. Zhao, I.S. Jeon, University of Texas at Dallas, J. Lee, J. Kim, Kookmin University, Korea, M. Kim, B.E. Gnade, R.M. Wallace, University of Texas at Dallas |
| DI-MoP4 TiN/Ta@sub 2@O@sub 5@/PE-SiN/TiN MIM Capacitor for RF and Mixed Signal IC Applications Y.S. Chung, K.S. Kim, Y.S. Ryu, S.B. Hwang, C.-S. Shin, S.-G. Park, J.K. Lee, Hynix Semiconductor Inc., Korea |
| DI-MoP5 The Physical and Electrical Characteristics of p@super+@-Polycrystalline-Si and Si@sub1-x@Ge@subx@(x=0.27)/High-k Gate Dielectric (AlN and Al@sub2@O@sub3@) Films C. Lee, J.Y. Park, C.H. Hwang, H.J. Kim, Seoul National University, Korea |
| DI-MoP6 Structure Properties and Thermal Stability of Plasma Oxynitrided Hf and Zr Thin Films Yi-Sheng Lai, L.-M. Chen, C.-H. Lu, J.S. Chen, National Cheng Kung University, Taiwan |
| DI-MoP7 Valence Band Offsets and Interface Structure of Hf@sub X@si@sub 1-X@o@sub 2@ Films on Si(111) from Photoemission Spectroscopy L. Fleming, North Carolina State University, M.D. Ulrich, Army Research Office, C. Hinkle, J.G. Hong, North Carolina State University, J.E. Rowe, University of North Carolina, G. Lucovsky, North Carolina State University, A.S.-Y. Chan, T.E. Madey, Rutgers University |
| DI-MoP8 Dry Etching of HfO@sub 2@ Films by Inductively Coupled Plasma S.-K. Yang, H.-Y. Song, S.-G. Lee, B.-H. O, I.-H. Lee, C.-W. Kim, S.-G. Park, Inha University, South Korea |
| DI-MoP9 Structural and Optical Properties of Erbium-doped Ba@sub 0.7@Sr@sub 0.3@TiO@sub 3@ Thin Films S.Y. Kuo, National Science Council, Taiwan, W.F. Hsieh, National Chiao Tung University, Taiwan |
| DI-MoP10 Comparison of Forming Gas Effects on the Ferroelectric Properties Between More-oriented and Less-oriented Pb(Zr@sub 0.53@Ti@sub 0.47@)O@sub 3@ Thin Films S.Y. Lee, E.S. Lee, H.W. Chung, S.H. Lim, Yonsei University, Korea |
| DI-MoP11 Effect of Pb(Zr@sub 0.52@Ti@sub 0.48@)O@sub 3@ Buffer Layers on the Fatigue Resistance of Pb(Zr,Ti)O@sub 3@-Pb(Mn,W,Sb,Nb)O@sub 3@ Thin Films S.Y. Lee, S.H. Lim, E.S. Lee, H.W. Chung, Yonsei University, Korea |
| DI-MoP12 Comparison of Ferroelectric Properties Between PZT (Pb(Zr,Ti)O@sub 3@) -PMWSN (Pb(Mn,W,Sb,Nb)O@sub 3@) Thin Film and PZT Thin Film C.S. Jeon, E.S. Lee, H.W. Chung, S.Y. Lee, Yonsei University, Korea |