AVS 51st International Symposium
    Dielectrics Monday Sessions
       Session DI-MoP

Paper DI-MoP10
Comparison of Forming Gas Effects on the Ferroelectric Properties Between More-oriented and Less-oriented Pb(Zr@sub 0.53@Ti@sub 0.47@)O@sub 3@ Thin Films

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: E.S. Lee, Yonsei University, Korea
Authors: S.Y. Lee, Yonsei University, Korea
E.S. Lee, Yonsei University, Korea
H.W. Chung, Yonsei University, Korea
S.H. Lim, Yonsei University, Korea
Correspondent: Click to Email
More-oriented and less-oriented Pb(Zr@sub 0.53@Ti@sub 0.47@)O@sub 3@(PZT) thin films were deposited by pulsed laser deposition method on (Pb@sub 0.72@La@sub 0.28@)Ti@sub 0.93@O@sub 3@ buffer and Pt/Ti/SiO@sub 2@/Si substrate, respectively, which were observed by XRD patterns. These films were annealed in H@sub 2@-contained ambient for 30 minutes at the substrate temperature of 400 °C to evaluate the forming gas annealing effects. The comparative studies on the ferroelectric properties of these two films were carried out, which are shown that the degradation rate of the more-oriented film is lower than that of less-oriented film. These results have proven that well oriented structures can prohibit the diffusion of the hydrogen into the film.