AVS 51st International Symposium
    Dielectrics Monday Sessions
       Session DI-MoP

Paper DI-MoP12
Comparison of Ferroelectric Properties Between PZT (Pb(Zr,Ti)O@sub 3@) -PMWSN (Pb(Mn,W,Sb,Nb)O@sub 3@) Thin Film and PZT Thin Film

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: C.S. Jeon, Yonsei University, Korea
Authors: C.S. Jeon, Yonsei University, Korea
E.S. Lee, Yonsei University, Korea
H.W. Chung, Yonsei University, Korea
S.Y. Lee, Yonsei University, Korea
Correspondent: Click to Email
Pb(Zr,Ti)OPb(Zr,Ti)O@sub 3@-Pb(Mn,W,Sb,Nb)O@sub 3@ (PZT-PMWSN) targets were fabricated using typical bulk ceramic processes. Thin films were deposited on Pt/Ti/SiO@sub 2@/Si substrate by pulsed laser deposition. Structural characteristics were measured by XRD (X-ray diffraction). Ferroelectric properties of thin films were investigated by P-E and C-V measurements to define hysteresis loops and dielectric constants. Results of PZT-PMWSN thin films were compared with those of PZT thin films. Leakage current of PZT-PMWSN thin film was higher than that of PZT film and crystallization was less oriented than that of PZT film. But P@sub r@ (remanant polarization) and dielectric constant showed higher values than those of PZT film.