| AVS 51st International Symposium | |
| Electronic Materials and Processing | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | DI-MoA1 Metal Nitride Gate Electrode Effects on Dielectric Properties of HfO2 and Hf-doped TaOx High-k Gate Dielectrics Y. Kuo, J.-Y. Tewg, J. Lu, Texas A&M University, P. Majhi, G. Bersuker, Sematech |
| 2:20pm | DI-MoA2 d-states Coupling in Mixed High-k Oxides: Transition Metal Oxide Binary Alloys, and Transition Metal-rare Earth Complex Oxides G. Lucovsky, C.C. Fulton, Y. Zhang, J.L. Whitten, R.J. Nemanich, H. Ade, NC State University, D.G. Schlom, Penn State University, J.L. Freeouf, Oregon Research Institute, Y. Zou, NC State University |
| 2:40pm | DI-MoA3 Invited Paper Theoretical Analysis of High-K Dielectric Interfaces with Silicon and Metals A.A. Demkov, Motorola, Inc. |
| 3:20pm | DI-MoA5 Nitrided Hafnium Silicates for Gate Dielectrics C.-G. Wang, H. Velasco, M. Verghese, E. Shero, G. Wilk, ASM America Inc., J.W. Maes, O. Laitinen, ASM International, Belgium, W. Deweerd, A. Delabie, IMEC, Belgium, R.L. Opila, A. Mathew, K. Demirkan, University of Delaware, J. Morais, I.J.R. Baumvol, Universidade Federal do Rio Grande do Sol, Brazil |
| 3:40pm | DI-MoA6 Optical Properties of Prospective High-k Dielectric Films E. Cicerrella, J.L. Freeouf, OGI School of Science & Engineering of OHSU, L.F. Edge, D.G. Schlom, The Pennsylvania State University, T. Heeg, J. Schubert, Inst. fur Schicht und Ionentech., Germany, S.A. Chambers, Pacific Northwest National Laboratory |
| 4:00pm | DI-MoA7 Spectroscopic Studies of Valence Band States in HfO2, TiO2, ZrO2 and HfTiO4 by Soft X-Ray and Vacuum Ultra-Violet Photoemission Spectroscopy C.C. Fulton, G. Lucovsky, North Carolina State University |
| 4:20pm | DI-MoA8 Electronic Properties and Band Alignments of Hf-based Gate Dielectrics on Silicon R. Puthenkovilakam, J.P. Chang, University of California, Los Angeles |
| 4:40pm | DI-MoA9 Interface Band Alignment in High-k Gate Stacks P. Hartlieb, E. Bersch, Rutgers University, S. Sayan, National Institute of Standards and Technology, R. Bartynski, E. Garfunkel, Rutgers University |
| 5:00pm | DI-MoA10 A New Approach to the Synthesis of Zr Oxynitride Alloys: Chemical and Electrical Characterizations B. Ju, G. Lucovsky, NC State University |