AVS 51st International Symposium
    Applied Surface Science Thursday Sessions

Session AS-ThM
High-k Dielectrics

Thursday, November 18, 2004, 8:20 am, Room 210A
Moderator: D.R. Baer, Pacific Northwest National Laboratory


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Click a paper to see the details. Presenters are shown in bold type.

8:20am AS-ThM1
Physical and Chemical Characterization of MOCVD Zirconia Films Deposited on Hydrogen-Terminated and Native Oxide Si Surfaces
B.R. Rogers, Vanderbilt Universirty, Z. Song, R.D. Geil, R.A. Weller, Vanderbilt University, M.O. Bloomfield, T.S. Cale, Rensselaer Polytechnic Institute
8:40am AS-ThM2 Invited Paper
Challenges for the Characterization and Integration of High-k Dielectrics
R.M. Wallace, University of Texas at Dallas
9:20am AS-ThM4
Engineering the Properties of Hf-based Gate Dielectrics: Role of Initial Surface Preparation and Post Deposition Annealing
R. Puthenkovilakam, Y.-S. Lin, J.P. Chang, University of California, Los Angeles
9:40am AS-ThM5
Applications of ARXPS to Semiconductor Fabrication and Characterization
P. Mack, M. Shakespeare, A. Wright, R.G. White, Thermo Electron Corporation, UK
10:00am AS-ThM6
ALD and MOCVD Growth of High K Dielectric Al and Hf Films Studied by Parallel Angle Resolved XPS (PARXPS)
R.K. Champaneria, P. Mack, J. Wolstenholme, R.G. White, Thermo Electron Corporation, UK
10:20am AS-ThM7
Comparative Study of Metal Oxy-Nitride Films by Electron Spectroscopy
P.M. Mrozek, D.F.A. Allgeyer, B.C. Carlson, K.B. Beaman, H.K. Krasinski, Micron Technology, Inc.
10:40am AS-ThM8 Invited Paper
Development of Reference Thin Films for Gate Oxide Thickness Determination and Ultra Shallow Junction Profiling
D.W. Moon, KRISS, Korea
11:20am AS-ThM10
XPS and SIMS Analysis of HfSiON Films
S. Miwa, S. Kusanagi, Y. Murakami, H. Kobayashi, Sony EMCS Corp., Japan
11:40am AS-ThM11
Nitridation of Hf Silicate Layers for Advanced CMOS Gate Oxides : A Core Level and Valence Band Study by Photoelectron Spectroscopy
O. Renault, CEA-DRT-LETI, France, N. Barrett, F. Calvat, CEA-DSM-DRECAM, France, Y. Le Tiec, CEA-DRT-LETI, France, P. Besson, ST-Microelectronics, France, F. Martin, CEA-DRT-LETI, France