AVS 51st International Symposium | |
Applied Surface Science | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | AS-ThM1 Physical and Chemical Characterization of MOCVD Zirconia Films Deposited on Hydrogen-Terminated and Native Oxide Si Surfaces B.R. Rogers, Vanderbilt Universirty, Z. Song, R.D. Geil, R.A. Weller, Vanderbilt University, M.O. Bloomfield, T.S. Cale, Rensselaer Polytechnic Institute |
8:40am | AS-ThM2 Invited Paper Challenges for the Characterization and Integration of High-k Dielectrics R.M. Wallace, University of Texas at Dallas |
9:20am | AS-ThM4 Engineering the Properties of Hf-based Gate Dielectrics: Role of Initial Surface Preparation and Post Deposition Annealing R. Puthenkovilakam, Y.-S. Lin, J.P. Chang, University of California, Los Angeles |
9:40am | AS-ThM5 Applications of ARXPS to Semiconductor Fabrication and Characterization P. Mack, M. Shakespeare, A. Wright, R.G. White, Thermo Electron Corporation, UK |
10:00am | AS-ThM6 ALD and MOCVD Growth of High K Dielectric Al and Hf Films Studied by Parallel Angle Resolved XPS (PARXPS) R.K. Champaneria, P. Mack, J. Wolstenholme, R.G. White, Thermo Electron Corporation, UK |
10:20am | AS-ThM7 Comparative Study of Metal Oxy-Nitride Films by Electron Spectroscopy P.M. Mrozek, D.F.A. Allgeyer, B.C. Carlson, K.B. Beaman, H.K. Krasinski, Micron Technology, Inc. |
10:40am | AS-ThM8 Invited Paper Development of Reference Thin Films for Gate Oxide Thickness Determination and Ultra Shallow Junction Profiling D.W. Moon, KRISS, Korea |
11:20am | AS-ThM10 XPS and SIMS Analysis of HfSiON Films S. Miwa, S. Kusanagi, Y. Murakami, H. Kobayashi, Sony EMCS Corp., Japan |
11:40am | AS-ThM11 Nitridation of Hf Silicate Layers for Advanced CMOS Gate Oxides : A Core Level and Valence Band Study by Photoelectron Spectroscopy O. Renault, CEA-DRT-LETI, France, N. Barrett, F. Calvat, CEA-DSM-DRECAM, France, Y. Le Tiec, CEA-DRT-LETI, France, P. Besson, ST-Microelectronics, France, F. Martin, CEA-DRT-LETI, France |