AVS 51st International Symposium
    Applied Surface Science Thursday Sessions
       Session AS-ThM

Paper AS-ThM7
Comparative Study of Metal Oxy-Nitride Films by Electron Spectroscopy

Thursday, November 18, 2004, 10:20 am, Room 210A

Session: High-k Dielectrics
Presenter: D.F.A. Allgeyer, Micron Technology, Inc.
Authors: P.M. Mrozek, Micron Technology, Inc.
D.F.A. Allgeyer, Micron Technology, Inc.
B.C. Carlson, Micron Technology, Inc.
K.B. Beaman, Micron Technology, Inc.
H.K. Krasinski, Micron Technology, Inc.
Correspondent: Click to Email
X-ray photoelectron spectroscopy (XPS) was used extensively to provide information regarding the chemical composition and chemical states of the nitrogen in silicon, hafnium, and other oxy-nitride films grown on silicon or tungsten substrates. Different substrates were investigated in order to minimize differential charging effects. Nitride and ON-like states were identified in different films, and their depth distributions were found to vary from film to film. Nondestructive angle-resolved XPS analysis was applied to reconstruct elemental distributions in films and showed a nitridization depth of ~4nm for SiON and below 2nm for HfON. These results were compared with activation enthalpy for nitridization for different systems.