AVS 51st International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP14
Time and Space Resolved Optical Emission Spectrogram of Inductively Coupled Chlorine Plasmas for Etch Process

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: T.L. Lin, National Tsing Hua University, Taiwan
Authors: P.H. Huang, National Tsing Hua University, Taiwan
T.L. Lin, National Tsing Hua University, Taiwan
K.C. Leou, National Tsing Hua University, Taiwan
H.J. Ding, National Tsing Hua University, Taiwan
C. Lin, National Tsing Hua University, Taiwan
Correspondent: Click to Email
The applications of optical emission spectroscopy as a quantitative plasma diagnostic technique are powerful tools with the highest benefit being noninvasive measurements of chemically complex discharges. The major task of this work@footnote 1@ was to develop a time and space resolved spectrograph measurement systems of plasma induced emissions from processing plasmas, such as plasma etchers. We used the optical emission tomography (OET) technology and optical emission actinometry (OEA) principles to measure Cl@super +@, Cl and Cl@sub 2@ density variations with space and time in a high density inductively coupled plasma (ICP). The measurement system consisted of a 3 channels spectometer and a motor driven scanning stage mounted on a slot shaped vacuum window on the processing chamber. The optical emissions were sampled by a optical fiber adaptor mounted on the motorized stage which can scan across the chamber horizontally. Due to the configuration of the scanning system, the sampled optical emissions from the plasma are not at the same point in the space-time phase space. A polynomial interpolation method was employed to obtain spectra intensities of Cl@super +@, Cl and Cl@sub 2@ at the same point in space-time phase space. Consequently, we could analyze the spatial-temporal transient behaviors. Experimental results show that spatial profiles of Cl@super +@, Cl, Cl@sub 2@ densities evolve in significantly different trend during the etch process. This might be results from the generation of etch products, SiCl@sub x@, and changing of chamber wall conditions. @FootnoteText@ @footnote 1@ This work has been supported by the National Science Council, ROC, grant no. NSC 92-2218-E-007-019.