| AVS 50th International Symposium | |
| Semiconductors | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | SC-TuM1 Invited Paper Antimonide-Based Compound Semiconductors: From Interfaces to High-Speed Transistors B.R. Bennett, R. Magno, J.B. Boos, Naval Research Laboratory, R. Tsai, A. Gutierrez, Northrop Grumman Space Technology |
| 9:00am | SC-TuM3 Invited Paper Understanding the Electronic Properties of Diluted Nitrides Relevant to Optoelectronic Applications W.M. Chen, Linköping University, Sweden, I. Buyanova, Linkoping University, Sweden |
| 9:40am | SC-TuM5 Nitrogen Incorporation and Strain Relaxation Mechanisms during Metalorganic Vapor Phase Epitaxy of GaAsN Layers on GaAs (001) J.-N. Beaudry, École Polytechnique de Montréal, Canada, G. Bentoumi, Université de Montréal, Canada, S. Guillon, Bookham Technology, Canada, R. Leonelli, Université de Montréal, Canada, R.A. Masut, P. Desjardins, École Polytechnique de Montréal, Canada |
| 10:00am | SC-TuM6 Stress Evolution and Nitrogen Incorporation in GaAsN Films Grown by Reactive Molecular Beam Epitaxy M. Reason, W. Ye, X. Weng, G. Obeidi, V. Rotberg, R.S. Goldman, University of Michigan |
| 10:20am | SC-TuM7 Electronic and Optical Properties of GaAsN/GaAs Quantum Wells N. Shtinkov, S. Turcotte, J.-N. Beaudry, P. Desjardins, R.A. Masut, École Polytechnique de Montréal, Canada, G. Bentoumi, R. Leonelli, Université de Montréal, Canada |
| 10:40am | SC-TuM8 Invited Paper Growth of InN and Related Compounds by RF Plasma Molecular Beam Epitaxy W.J. Schaff, H. Lu, Cornell University |
| 11:20am | SC-TuM10 Electronic Band Structure Ge(1-x)Sn(x) Alloys Grown on Silicon C.S. Cook, Arizona State University, S. Zollner, Motorola, M. Bauer, J. Kouvetakis, J. Menendez, J. Tolle, Arizona State University, C. Bungay, J. A. Woollam Co., Inc. |