AVS 50th International Symposium
    Semiconductors Tuesday Sessions
       Session SC-TuM

Paper SC-TuM10
Electronic Band Structure Ge(1-x)Sn(x) Alloys Grown on Silicon

Tuesday, November 4, 2003, 11:20 am, Room 321/322

Session: Narrow Gap Semiconductors
Presenter: C.S. Cook, Arizona State University
Authors: C.S. Cook, Arizona State University
S. Zollner, Motorola
M. Bauer, Arizona State University
J. Kouvetakis, Arizona State University
J. Menendez, Arizona State University
J. Tolle, Arizona State University
C. Bungay, J. A. Woollam Co., Inc.
Correspondent: Click to Email
The development of manufacturable direct band gap materials on Si is crucial for optoelectronic devices integrated with silicon circuits. Ge-Sn alloys with varying metastable compositions ranging from 2% - 18% were grown by UHV-CVD using a newly developed deuterium-stabilized Sn hydride with digermane. We use deep ultra violet and infrared spectroscopic ellipsometry to determine the optical properties of this new class of Si-based infrared semiconductors in the Ge1-xSnx system. Optical analysis of the energy derivatives in comparison with analytical lineshapes shows a Ge-like bandstructure that is substantially red-shifted compared that of elemental Ge. Tunability of these gaps with composition could have interesting optoelectronic applications.