AVS 50th International Symposium
    Semiconductors Tuesday Sessions
       Session SC-TuM

Invited Paper SC-TuM3
Understanding the Electronic Properties of Diluted Nitrides Relevant to Optoelectronic Applications

Tuesday, November 4, 2003, 9:00 am, Room 321/322

Session: Narrow Gap Semiconductors
Presenter: W.M. Chen, Linköping University, Sweden
Authors: W.M. Chen, Linköping University, Sweden
I. Buyanova, Linkoping University, Sweden
Correspondent: Click to Email
Dilute nitride semiconductors exhibits unusual physical properties, like a giant bowing in the bandgap energy, forming an attractive new material system promising for long wavelength light emitters operating within the optic-fiber communication wavelength window. A full exploration of the alloys potential in device applications requires, however, detailed knowledge of their fundamental physical parameters and material issues. In this talk we shall provide an overview of our present understanding of basic electronic properties of the dilute nitrides such as Ga(In)NAs alloys and some key material-related problems relevant to optoelectronic device applications, such as determination of dominant mechanism for carrier recombination, potential fluctuation and localization effect, identification and formation of non-radiative defects, effects of post-growth thermal annealing and hydrogenation, compositional dependence of the electron effective mass and band alignment in Ga(In)NAs/GaAs heterostructures.