| AVS 50th International Symposium | |
| Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS2-WeM1 Ion-enhanced Etching of High-k Dielectric Films with Mass-analyzed Ion Beam Irradiation K. Karahashi, N. Yamagishi, MIRAI-ASET, Japan, T. Horikawa, MIRAI-ASRC/AIST, Japan, A. Toriumi, MIRAI-ASRC/AIST and University of Tokyo, Japan |
| 8:40am | PS2-WeM2 Etching Characteristics of High-k Dielectric HfO@sub 2@ Films in Inductively Coupled Fluorine-Containing Plasmas K. Takahashi, K. Ono, Y. Setsuhara, Kyoto University, Japan |
| 9:00am | PS2-WeM3 Plasma Etching of High Dielectric Constant Materials on Silicon L. Sha, D.L. Ramirez, J.P. Chang, University of California, Los Angeles |
| 9:20am | PS2-WeM4 Investigation of Etching Properties of Hafnium Oxide Based High-K Materials Using Inductively Coupled Plasma J. Chen, W.J. Yoo, S.H.D. Chan, National University of Singapore |
| 9:40am | PS2-WeM5 Selective Dry Etching of SrBi@sub 2@Ta@sub 2@O@sub 9@/CeO@sub 2@ in the High Density Inductively Coupled Plasma Reactive Ion Etching S.I. Shim, Korea University, Y.S. Kwon, S.I. Kim, Y.T. Kim, Korea Institute of Science and Technology, J.H. Park, Korea University |
| 10:00am | PS2-WeM6 High Rate Etching of SiC in Ultrahigh Density Plasmas Excited by Electron Cyclotron Resonance K. Nakamura, M. Tuda, M. Taki, K. Shintani, H. Sumitani, Mitsubishi Electric Corporation, Japan |
| 10:20am | PS2-WeM7 Chemical Mechanisms of Metal Etching in High Density Plasmas A.S. Orland, R. Blumenthal, Auburn University |
| 10:40am | PS2-WeM8 Low Energy Electron Enhanced Etching (LE4) of HgCdTe and III-V Semiconductor Materials J. Kim, T.S. Koga, C. Miclaus, H.P. Gillis, M.S. Goorsky, University of California, Los Angeles, G.A. Garwood, D.R. Rhiger, S.M. Johnson, Raytheon Infrared Operations |