| AVS 50th International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS1-ThM1 Reactive Sputtering of Metallic Tin in a Mixture Ar - O2 : Comparison between an Amplified and a Classical Magnetron Discharge R. Snyders, Mons-Hainaut University, Belgium |
| 8:40am | PS1-ThM2 Selective Plasma-induced Deposition of Fluorocarbon Films on Metal Surfaces for Actuation in Microfluidics P. Bayiati, A. Tserepi, E. Gogolides, K. Misiakos, National Center for Scientific Research (NCSR) "Demokritos", Greece |
| 9:00am | PS1-ThM3 Invited Paper Deposition of Transparent Tin Oxide Films by PECVD on Polymers F. Arefi-Khonsari, J. Pulpytel, Laboratoire de Genie des Procedes Plasma et Traitement de Surface ENSCP, France, H. Cachet, UPR15-CNRS, France |
| 10:20am | PS1-ThM7 Temperature Dependence of the SiH@sub 3@ Surface Reactivity During Plasma Deposition of a-Si:H Studied by Time-resolved CRDS J.P.M. Hoefnagels, Y. Barrell, M.C.M. van de Sanden, W.M.M. Kessels, Eindhoven University of Technology, The Netherlands |
| 10:40am | PS1-ThM8 Creation of SiOF Films with SiF@sub 4@/O@sub 2@ Plasmas: from Gas-Surface Interactions to Film Formation J. Zhang, E.R. Fisher, Colorado State University |
| 11:00am | PS1-ThM9 Study of Fluorocarbon Deposition Mechanism with a Small Gap Structure in Fluorocarbon Plasmas L. Zheng, X. Li, X. Hua, L. Ling, G.S. Oehrlein, University of Maryland, College Park, E.A. Hudson, Lam Research Corp. |
| 11:20am | PS1-ThM10 Plasma Chemistry and the Growth Kinetics of Silicon Nitride Deposited by the SiH@sub 4@-N@sub 2@ Reactant Mixture F.J.H. Van Assche, J. Hong, M.C.M. van de Sanden, W.M.M. Kessels, Eindhoven University of Technology, The Netherlands |
| 11:40am | PS1-ThM11 Molecular Dynamics Simulations of Organic Polymer Etching by H@sub 2@/N@sub 2@ and NH@sub 3@ Plasmas H. Yamada, S. Hamaguchi, Kyoto University, Japan |