AVS 50th International Symposium
    Plasma Science and Technology Tuesday Sessions

Session PS+TF-TuM
Plasma Enchanced Chemical Vapor Deposition

Tuesday, November 4, 2003, 8:20 am, Room 315
Moderator: D.C. Guerin, Naval Research Laboratory


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am PS+TF-TuM1 Invited Paper
PECVD, From the Laboratory to Mass Production
J.P.M. Schmitt, Unaxis Management Incorporated, Switzerland
9:00am PS+TF-TuM3
Plasma-enhanced Deposition of Silicon and Metal Oxynitride Films in a High-density Ammonia Discharge
Z.G. Xiao, T.D. Mantei, University of Cincinnati
9:20am PS+TF-TuM4
Identification of the Growth Precursors for Hydrogenated Amorphous Carbon Growth
J. Benedikt, R.V. Woen, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands
9:40am PS+TF-TuM5
Characterization of TaN Diffusion Barrier Layers Prepared by Chemical-Enhanced Physical Vapor Deposition (CEPVD)
N. Li, D.N. Ruzic, University of Illinois, Urbana-Champaign
10:20am PS+TF-TuM7 Invited Paper
Anisotropic Cu Deposition using Plasma Chemical Vapor Deposition
M. Shiratani, K. Takenaka, M. Takeshita, M. Kita, K. Koga, Y. Watanabe, Kyushu University, Japan
11:00am PS+TF-TuM9
Pulsed-plasma Deposition of Silicon Dioxide in a High Density Oxygen Discharge
Y. Qi, T.D. Mantei, University of Cincinnati
11:40am PS+TF-TuM11
Secondary Plasma Based Debris Mitigation for Next-Generation 13.5nm EUVL Sources
B. Jurczyk, D.N. Ruzic, E. Vargas-Lopez, M. Neumann, M. Williams, C. Chrpbak, S. Taj, University of Illinois at Urbana-Champaign