| AVS 50th International Symposium | |
| Applied Surface Science | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | AS-FrM1 Static ToF-SIMS - A VAMAS Interlaboratory Study, 2002 I.S. Gilmore, M.P. Seah, National Physical Laboratory, UK |
| 8:40am | AS-FrM2 TOF-SIMS with Polyatomic Primary Ion Bombardment: A Comparison Between Different Projectiles R. Möllers, F. Kollmer, D. Rading, M. Terhorst, E. Niehuis, ION-TOF GmbH, Germany, R. Kersting, B. Hagenhoff, Tascon GmbH, Germany |
| 9:00am | AS-FrM3 Characterisation of Peptides Using TOF-SIMS with Polyatomic Primary Ion Bombardment K. Pfitzer, E. Tallarek, R. Kersting, B. Hagenhoff, TASCON GmbH, Germany |
| 9:20am | AS-FrM4 Invited Paper SIMS Quantification for Depth Profiling: Overview, Recent Results for Surfaces and Insulators, and Current Problems F.A. Stevie, C. Gu, A. Pivovarov, D.P. Griffis, North Carolina State University, J.M. McKinley, NanoSpective, H. Francois-Saint-Cyr, University of Central Florida |
| 10:40am | AS-FrM8 SIMS Backside Depth Profiling of Test Pads on PMOS Patterned Wafers E.S. Windsor, J.G. Gillen, P.H. Chi, National Institute of Standards and Technology, J.A. Bennett, International Sematech |
| 11:20am | AS-FrM10 Development and its Application of Multiple as Delta Layer Si Reference Thin Film for Shallow Junction SIMS Profiling D.W. Moon, H.K. Kim, K.J. Kim, Korea Research Institute of Standards and Science, H.K. Shon, J.Y. Won, J.C. Lee, Samsung Advanced Institute of Technology, Korea, F. Toujou, Matsushita Technoresearch, Inc., Japan |