AVS 50th International Symposium
    Applied Surface Science Friday Sessions
       Session AS-FrM

Paper AS-FrM10
Development and its Application of Multiple as Delta Layer Si Reference Thin Film for Shallow Junction SIMS Profiling

Friday, November 7, 2003, 11:20 am, Room 324/325

Session: SIMS
Presenter: D.W. Moon, Korea Research Institute of Standards and Science
Authors: D.W. Moon, Korea Research Institute of Standards and Science
H.K. Kim, Korea Research Institute of Standards and Science
K.J. Kim, Korea Research Institute of Standards and Science
H.K. Shon, Samsung Advanced Institute of Technology, Korea
J.Y. Won, Samsung Advanced Institute of Technology, Korea
J.C. Lee, Samsung Advanced Institute of Technology, Korea
F. Toujou, Matsushita Technoresearch, Inc., Japan
Correspondent: Click to Email
To meet the demand for shallow junction SIMS profiling, the surface transient Si sputtering effect should be corrected in addition to the improvement of depth resolution. With low energy grazing incident ions, the SIMS depth resolution could be improved better than 1 nm. For the correction of the surface transient effect, we report that multiple As delta-layer Si thin films characterized with HRTEM and MEIS can be used as a reference thin film. With the reference thin films, the depth scale shift in the surface transient region can be calibrated under each analysis condition. For low energy O@sub 2@@super +@ and Cs@super +@ ion bombardment, the average Si sputtering yield in the first surface 5 nm layer can be 50~70% higher than that in the steady state for typical incidence angles around 45°. However, for incidence angle above 60°, the surface transient effect enhanced significantly with the increase of the sputtering yield up to 150% and the extensition of the surface transient region up to 15 nm for low energy Cs@super +@ bombardment. Preliminary understanding for the enhanced surface transient effect will be discussed.