AVS 50th International Symposium
    Plasma Science and Technology Wednesday Sessions
       Session PS1-WeM

Paper PS1-WeM8
High Flux and Low Energy Neutral Beam Formation Using a Low Angle Forward Reflected Neutral Beam System

Wednesday, November 5, 2003, 10:40 am, Room 314

Session: Plasma Processing of Nanostructures and Nanomaterials
Presenter: D.H. Lee, Sungkyunkwan University, South Korea
Authors: D.H. Lee, Sungkyunkwan University, South Korea
S.J. Jung, Sungkyunkwan University, South Korea
K.H. Baek, Samsung Electronics, South Korea
C.J. Kang, Samsung Electronics, South Korea
G.Y. Yeom, Sungkyunkwan University, South Korea
Correspondent: Click to Email
Plasma etching is one of the key technologies in the fabrication of deep submicron silicon-based integrated circuits. However, plasma etching has a serious disadvantage due to the energetic charged particle such as positive ion and photons generated in the plasma. Charge-induced damage during the plasma etching is one of the serious problems that have to be solved for the deep submicron semiconductor devices as well as future nanoscale devices. To avoid the charge-related damage, several low-damage processes have been proposed and one of the techniques to avoid the problem is to use neutral beam etching. Among the techniques fabricating a neutral beam, a low angle reflection of the ion beam where ions extracted from the ion source are neutralized by a low angle reflection during the reflection has been investigated in this study. Previous studies showed that, by the reflection of the ion beam at 5 degree angle of incidence, most all of the ions could be neutralized and nearly vertical SiO2 etching could be obtained for various fluorine based gases. In this study, for the formation of high flux and low energy neutral beam, a modified neutral beam source was proposed, and Si and SiO2 etch properties such as etch rate, etch selectivity, and etch profiles with fluorine-based gases using this system have been investigated. Also, the surface damage of the etched Si surface was investigated using TEM.