AVS 50th International Symposium
    Plasma Science and Technology Wednesday Sessions
       Session PS1-WeM

Paper PS1-WeM5
Growth of Vertically Aligned Carbon Nanotubes Using a High Density Plasma CVD Process

Wednesday, November 5, 2003, 9:40 am, Room 314

Session: Plasma Processing of Nanostructures and Nanomaterials
Presenter: H.W. Wei, National Tsing Hua University, ROC
Authors: H.W. Wei, National Tsing Hua University, ROC
K.C. Leou, National Tsing Hua University, ROC
M.T. Wei, National Tsing Hua University, ROC
K.J. Shen, National Tsing Hua University, ROC
C.H. Tsai, National Tsing Hua University, ROC
C. Lin, National Tsing Hua University, ROC
Correspondent: Click to Email
Vertically aligned multiwall carbon nanotubes are grown on silicon substrates with Ni catalyst patterns using an inductively-coupled high density plasma chemical vapor deposition reactor. The plasma is produced by 13.56 MHz RF power and a feed gas of C@sub 2@H@sub 2@ and H@sub 2@ mixture at a pressure below 100 mtorr. A heated and DC biased subtrate stage is employed to allow low temperature and aligned growth of CNTs. Due to low pressure operation, the growth rate of the CNTs is relative low (50-200 nm/min.) while the diameter of the tubes ranges from 30 nm to 120 nm depending on growth conditions. Another feature of the patterned and aligned growth of the CNTs using this HDP-CVD process is that the density of CNTs is relatively low (10@super 8@ to 10@super 9@ 1/cm@super 2@) although the CNTs are directly grown on 5 µm x 5 µm catalyst patterns. This will result in a reduction of the shielding effect of electric field for field emission appication of the CNTs. Results from parametric study of CNTs properties based on Raman spectroscopy, TEM and field emission measurements with process conditions as well as measurements from a mass spectrometer and plasma emission actinometry (for H atom) will be presented. @FootnoteText@ Work supported by the NSC of the R.O.C., grant No. NSC 90-2622-E-007-004.