AVS 50th International Symposium
    Plasma Science and Technology Wednesday Sessions
       Session PS-WeP

Paper PS-WeP15
Principle of a Beam Profile Controlled Linear Ion Beam Source and Application Examples

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: M. Nestler, Roth & Rau AG, Germany
Authors: M. Nestler, Roth & Rau AG, Germany
D. Roth, Roth & Rau AG, Germany
F Scholze, Institut f@um u@r Oberfl@um a@chenmodifizierung Leipzig e.V., Germany
M. Tartz, Institut f@um u@r Oberfl@um a@chenmodifizierung Leipzig e.V., Germany
M. Zeuner, Ion+Tech GmbH, Germany
H. Neumann, Institut f@um u@r Oberfl@um a@chenmodifizierung Leipzig e.V., Germany
Correspondent: Click to Email
We present a microwave excited ECR (electron cyclotron resonance) type low energy linear ion beam source with a special grid system for cleaning, surface treatment, etching, figuring, surface modification and thin film deposition. By means of a modular design with basic module length of 400 and 600 mm this source is easily scalable up to some meters for production environment. Fitting this source with a special designed, segmented multi-aperture three grid system and power supplies in combination with a variable electrical switcher, which allows a changing of the pulse length of the accelerator voltage applied on each segment, the profile of this low energy ion beam is adaptable on different process requirements. We discuss the measured beam profiles in correlation to the controlling principles by using inert and reactive gases and draw up the technological possibilities for this new broad beam ion source by means of selected examples. Its integration into an in-line production equipment is demonstrated.