AVS 50th International Symposium
    Manufacturing Science and Technology Monday Sessions
       Session MS-MoM

Paper MS-MoM6
Advanced Clean Process by Supercritical Carbon Dioxide

Monday, November 3, 2003, 10:00 am, Room 309

Session: Process and Equipment Integration and Development
Presenter: H.-J. Tu, Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan, R.O.C.
Authors: H.-J. Tu, Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan, R.O.C.
P. Chuang, Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan, R.O.C.
C.-Y. Wang, Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan, R.O.C.
Y.-L. Lin, Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan, R.O.C.
H. Lo, Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan, R.O.C.
M.-S. Zhou, Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan, R.O.C.
M.-S. Liang, Taiwan Semiconductor Manufacturing Company, Ltd., Taiwan, R.O.C.
Correspondent: Click to Email
As device approaching nano-scale, it is more difficult to extend aqueous-based clean processes to future generations due to its high surface tension characteristics. An advanced clean process by supercritical carbon dioxide (SCCO@sub 2@) becomes a potential enabling technology in semiconductor industries for its specific capabilities of low surface tension, chemical inertness, and more friendly ESH (environment, safety, and health) which can overcome future wafer clean challenges. In the present work, we show that using SCCO@sub 2@ can successfully remove residue/polymer for advanced sub 100 nano-meter copper low-k interconnect fabrication. In addition, it appears that the low-k dielectric film is much less damaged by this novel technology than conventional clean process.