AVS 50th International Symposium
    Manufacturing Science and Technology Monday Sessions
       Session MS-MoM

Paper MS-MoM4
Multi-scale Modeling of Chemical Mechanical Planarization

Monday, November 3, 2003, 9:20 am, Room 309

Session: Process and Equipment Integration and Development
Presenter: S. Shankar, Intel Corp.
Authors: L. Jiang, Intel Corp.
H. Simka, Intel Corp.
S. Skokov, Intel Corp.
D. Thakurta, Intel Corp.
S. Shankar, Intel Corp.
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A coherent modeling approach is presented for mechanics and transport effects in CMP process. Different regimes of material removal are identified based on first-principle analysis on slurry transport, stress, and slurry flow. Important effects of pad, glazing, conditioning, and polisher design are demonstrated with oxide polish model results. We review multiple-scale model linking with an emphasis on the innovative methods to combine flow and stress analysis from feature to wafer scale. Micron-scale models developed at Intel are presented to illustrate the complexity of particle-level dynamics in CMP and the physical processes involved in patterned wafer planarization.