AVS 50th International Symposium
    Manufacturing Science and Technology Monday Sessions
       Session MS-MoM

Paper MS-MoM11
The Study on Deformation of ArF Photo Resist in Dry Etching

Monday, November 3, 2003, 11:40 am, Room 309

Session: Process and Equipment Integration and Development
Presenter: C.-H. Shin, Samsung Electronics Co., Ltd., Korea
Authors: C.-H. Shin, Samsung Electronics Co., Ltd., Korea
G.J. Min, Samsung Electronics Co., Ltd., Korea
C.J. Kang, Samsung Electronics Co., Ltd., Korea
J.T. Moon, Samsung Electronics Co., Ltd., Korea
Correspondent: Click to Email
193nm ArF lithography has been introduced in DRAM industry for sub-90nm patterning. However, it has several issues in the substrate fabrication of sub-90nm patterning. First, the physical thickness of resist has been decreased less than 3000Å, which is critical point for stable pattern transfer. Second, durability of resist in the plasma was reduced due to the increase of Ohnish parameter. Third, resist is subjected to deformation when it is exposed to the plasma due to its soft chemical structure. All these factors limit the application of ArF lithography. Etching was performed in the commercially available dual frequency plasma based on O2, Ar, CO and C4F6 single gas chemistry, respectively. It was found that supply of bias power in the argon gas system led to the severe deformation of ArF photo resist. Novel techniques for the formation of protective layer will be discussed in this paper in order to suppress resist deformation with enhanced etch selectivity.