| 8:20am |
TF+VT-WeM1 Invited Paper
The PE-ALD of Ta Based Metals/Nitrides: The Growth, Materials Properties, and Applications to Future Device Fabrications
H. Kim, S.M. Rossnagel, IBM T.J. Watson Research Center |
| 9:00am |
TF+VT-WeM3
Characteristics of TiN Films Deposited by rf Remote Plasma Enhanced Atomic Layer Deposition (ALD) Method using Metal Organic Precursor
S. Seo, J. Kim, Y. Kim, Y.D. Kim, H. Jeon, Hanyang University, Korea |
| 9:20am |
TF+VT-WeM4
Importance of Hydrogen Recombination on Flow Tube Walls During Hydrogen Radical-Assisted Metal Atomic Layer Deposition
R.K. Grubbs, S.M. George, University of Colorado, Boulder |
| 9:40am |
TF+VT-WeM5
Improved Nucleation of TiN ALD Films on Low k Polymer Dielectrics Using Al@sub 2@O@sub 3@ ALD Adhesion Layers
C.A. Wilson, J.W. Elam, M. Schuisky, Z.A. Sechrist, S.M. George, University of Colorado |
| 10:00am |
TF+VT-WeM6 Invited Paper
Alternating Layer Deposition of Dielectric Films
A.P. Paranjpe, B. McDougall, K.Z. Zhang, W. Vereb, TORREX |
| 10:40am |
TF+VT-WeM8
Photochemically-Assisted ALD of BN Thin Films
J. Olander, M. Ottosson, K.M.E. Larsson, Uppsala University, Sweden |