AVS 49th International Symposium
    Thin Films Wednesday Sessions
       Session TF+VT-WeM

Paper TF+VT-WeM8
Photochemically-Assisted ALD of BN Thin Films

Wednesday, November 6, 2002, 10:40 am, Room C-101

Session: Atomic Layer Deposition - Barriers & Nitrides
Presenter: J. Olander, Uppsala University, Sweden
Authors: J. Olander, Uppsala University, Sweden
M. Ottosson, Uppsala University, Sweden
K.M.E. Larsson, Uppsala University, Sweden
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Boron nitride-based materials have properties like high thermal stability, oxidation resistance and interesting electronic properties and are thus suitable materials for electronic devices, heat resistant semiconductors and lubricants. Thin films of BN materials have only to limited extent been prepared and the film properties are not well known. A combined experimental and theoretical investigation of BN growth from NH3 and BBr3 has been performed. Thin films of Boron Nitride have been deposited on SiO2 by means of Laser-Assisted Atomic Layer Deposition (ALD) using an ArF excimer laser. The deposition temperatures were between 300 and 750 °C. In order to investigate the growth at an atomic level, theoretical calculations have been performed using the DFT method. Theoretically, the adsorption of the NH3 and BBr3 and their fragmented components were found to be favorable for continued growth of cubic BN. However, the films obtained in the present study are of turbostratic structure. Both NH3 and BBr3 were observed to strongly absorb light from the ArF excimer laser. As a result of the photofragmentation of the precursors, the growth rate of the BN films was increased. At lower temperatures, the densities of the grown BN films were also enhanced.