AVS 49th International Symposium
    Thin Films Wednesday Sessions
       Session TF+VT-WeM

Paper TF+VT-WeM3
Characteristics of TiN Films Deposited by rf Remote Plasma Enhanced Atomic Layer Deposition (ALD) Method using Metal Organic Precursor

Wednesday, November 6, 2002, 9:00 am, Room C-101

Session: Atomic Layer Deposition - Barriers & Nitrides
Presenter: S. Seo, Hanyang University, Korea
Authors: S. Seo, Hanyang University, Korea
J. Kim, Hanyang University, Korea
Y. Kim, Hanyang University, Korea
Y.D. Kim, Hanyang University, Korea
H. Jeon, Hanyang University, Korea
Correspondent: Click to Email
Titanium nitride (TiN) has been most widely used as a diffusion barrier in ULSI devices because of its very low resistivity, good chemical and thermal stability, and impermeability to Si diffusion as well as the excellent adhesion to Si and SiO@sub 2@ films.@footnote 1-3@ TiN barrier layer has been deposited predominantly by sputtering and chemical vapor deposition method.@footnote 4@ However, as the device dimension has been shrinking down continuously, TiN films deposited by sputtering and CVD have faced the serious problems such as poor step coverage and conformality. Also, especially for the TiN films deposited by CVD using metal organic precursors, a relatively considerable amount of carbon impurity is still incorporated into the TiN films. For these reasons, we investigated TiN films deposited by rf remote plasma enhanced atomic layer deposition (ALD) technique which is expected to reduce or eliminate the problems related with sputtering and CVD.@footnote 5@ TiN films were deposited using tetrakis-dimethyl-amido-titanium (TDMAT) as Ti precursor and ammonia (NH@sub 3@) and reactant gas at the optimized ALD processing windows. Rf remote plasma was used to reduce the carbon incorporation and to enhance chemical stability. The physical, chemical and electrical characteristics of TiN films were analyzed using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), rutherford backscattering spectrometer (RBS), cross-sectional transmission electron microscope (XTEM) and four-point probe method. @FootnoteText@ @footnote 1@M. Ritala, M. Leskela, E. Rauhala and J. Jokinen, J. Electocem. Soc., Vol. 145, 8 (1998) 2914. @footnote 2@M. T. Schulberg, M. D. Allendorf and D. A. Outka, J. Vac. Sci. Technol., A 14(6) (1996) 3228. @footnote 3@M. Eizenberg, MRS Bull. 20 (1995) 38. @footnote 4@A. Bouteville, L. lmhoff and J. C. Remy, Y. R. Yang and Y. F. Hsieh, J. Vac. Sci. Technol. B 16(4) (1998) 2013. @footnote 5@H. Jeon, J. W. Lee, Y. D. Kim, D. S. Kim and K. S. Yi : Vac. Sci. Technol. 18 (2000) 1595.