| 8:20am |
SS+EL-WeM1
Nucleation and Epitaxial Growth of Gallium Nitride on Sapphire (0001) using Ion-beam-assisted Molecular Beam Epitaxy
B. Cui, I.P. Steinke, P.I. Cohen, University of Minnesota |
| 8:40am |
SS+EL-WeM2
STM Characterization of Ge Nucleation on Ge(001)
M. Li, E.I. Altman, Yale University |
| 9:00am |
SS+EL-WeM3
High Resolution Large Area STM Analysis of Nucleationless Island Formation in SiGe/Si(100)
P. Zahl, P.W. Sutter, J.S. Palmer, E.A. Sutter, Colorado School of Mines |
| 9:20am |
SS+EL-WeM4
Scanning Probes and Transition States: Uncovering the Low-barrier Si ad-dimer Diffusion Mechanism on Si(001) by its Electric Field Dependence
T.R. Mattsson, B.S. Swartzentruber, Sandia National Laboratories, R. Stumpf, Motorola Labs, P.J. Feibelman, Sandia National Laboratories |
| 9:40am |
SS+EL-WeM5
Simulations of Surface Diffusion on Amorphous Silicon
A.S. Dalton, E.G. Seebauer, University of Illinois |
| 10:00am |
SS+EL-WeM6
Relaxation of a Single Silicon Mound during Silicon Deposition on the Si(111)(7x7)
A. Ichimiya, Y. Tsutsui, Nagoya University, Japan |
| 10:20am |
SS+EL-WeM7
Morphology of Crystal Growth on Vicinal Surfaces: MBE and H-assisted MBE Growth on Laser-textured Ge(001)
A. Raviswaran, D.G. Cahill, University of Illinois |
| 10:40am |
SS+EL-WeM8
Characterization of Si(100) Homoepitaxy Grown in the STM at Low Temperatures
H. Grube, G.W. Brown, M.E. Hawley, Los Alamos National Laboratory |