AVS 49th International Symposium
    Surface Science Wednesday Sessions
       Session SS+EL-WeM

Paper SS+EL-WeM7
Morphology of Crystal Growth on Vicinal Surfaces: MBE and H-assisted MBE Growth on Laser-textured Ge(001)

Wednesday, November 6, 2002, 10:20 am, Room C-110

Session: Nucleation & Growth of Semiconductors
Presenter: D.G. Cahill, University of Illinois
Authors: A. Raviswaran, University of Illinois
D.G. Cahill, University of Illinois
Correspondent: Click to Email
We delineate the growth conditions of temperature, substrate vicinality, and concentration of surface adsorbates that produce rough and smooth crystal growth of Ge by molecular beam epitaxy. Ge(001) substrates are modified by laser texturing to produce a large range of vicinalities 0<@theta@<10° within a 5 µm diameter laser-dimple. We then deposit Ge on these modified substrates over a wide range of growth temperatures 150