AVS 49th International Symposium
    Surface Science Wednesday Sessions
       Session SS+EL-WeM

Paper SS+EL-WeM8
Characterization of Si(100) Homoepitaxy Grown in the STM at Low Temperatures

Wednesday, November 6, 2002, 10:40 am, Room C-110

Session: Nucleation & Growth of Semiconductors
Presenter: H. Grube, Los Alamos National Laboratory
Authors: H. Grube, Los Alamos National Laboratory
G.W. Brown, Los Alamos National Laboratory
M.E. Hawley, Los Alamos National Laboratory
Correspondent: Click to Email
We explore the growth of low-temperature bulk-like Si(100) homoepitaxy with regard to microscopic surface roughness and defects. We characterize films grown at different temperatures up to 500K in-situ by means of an effusion cell added to our UHV-STM. The development of novel architectures for future generation computers calls for high-quality homoepitaxial Si(100) grown at low temperature.@footnote 1@ Even though Si(100) can be grown crystalline up to a limited thickness,@footnote 2@ the microstructure reveals significant small-scale surface roughness@footnote 3@ and defects specific to low-temperature growth.@footnote 4@ Both can be detrimental to fabrication and operation of small-scale electronic devices. @FootnoteText@ @footnote 1@ B. Kane, Nature 393, 133 (1998)@footnote 2@ DJ Eaglesham, J. Appl. Phys., 77, 3597 (1995)@footnote 3@ RJ Hamers et al., J. Vac. Sci. Technol. A 8, 195 (1990)@footnote 4@ MJ Bronikowski et al., Phys. Rev. B, 48, 12 361 (1993) .