| AVS 49th International Symposium | |
| Plasma Science | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS+MM-WeA1 Plasma Molding Over Trenches and Resulting Ion/Fast-neutral Distribution Functions D. Economou, D. Kim, University of Houston |
| 2:20pm | PS+MM-WeA2 Physically Based Modelling of High-Density-Plasma-CVD on the Feature Scale G. Schulze-Icking, A. Kersch, Infineon Technologies AG, Germany, A. Knorr, Infineon Technologies, A. Hausmann, J. Radecker, Infineon Technologies Dresden GmbH & Co. OHG |
| 2:40pm | PS+MM-WeA3 Invited Paper Micro- and Nano-Fabrication Technology for High Aspect Ratio Micro-Electromechanical Systems (MEMS) S.W. Pang, The University of Michigan |
| 3:20pm | PS+MM-WeA5 Invited Paper Critical Tasks in the High Aspect Ratio Silicon Dry Etching for MEMS I.W. Rangelow, University of Kassel, Germany |
| 4:00pm | PS+MM-WeA7 Deep Silicon Etch Profile Control for Micro-Sensor Applications R.J. Shul, M.G. Blain, S.G. Rich, S.A. Zmuda, C.G. Willison, R.P. Manginell, Sandia National Laboratories |
| 4:20pm | PS+MM-WeA8 Profile Control as a Function of Process Parameters in Deep Anisotropic Etching of Silicon M.L. Steen, T.J. Dalton, IBM T.J. Watson Research Center |
| 4:40pm | PS+MM-WeA9 Mechanisms Involved in the Silicon Cryogenic Etching Process M. Boufnichel, GREMI / ST Microelectronics, France, P. Lefaucheux, R. Dussart, GREMI, France, P. Ranson, GREMI-Universite d'Orleans-CNRS, France |
| 5:00pm | PS+MM-WeA10 3-Dimensional Feature Profile Evolution Using Level Set Methods H. Hwang, T.R. Govindan, M. Meyyappan, NASA Ames Research Center |