| AVS 49th International Symposium | |
| Electronic Materials and Devices | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| EL+SC-WeP1 Mechanistic Aspects of SiC Oxidation C. Radtke, F.C. Stedile, I.J.R. Baumvol, UFRGS, Brazil, I.C. Vickridge, I. Trimaille, J.-J. Ganem, S. Rigo, Universite de Paris 6 et 7, France |
| EL+SC-WeP2 Comparison of the Decomposition of Metacarborane and Orthocarborane A.N. Caruso, P.A. Dowben, University of Nebraska, Lincoln |
| EL+SC-WeP3 Non Destructive Evaluation of Alternative Substrate Quality Using Glancing Incidence X-Ray Diffraction and Raman Spectroscopy H.J. Haugan, A.M. Cain, T.W. Haas, K.G. Eyink, Air Force Research Laboratory, C.J. Eiting, Uniroyal Optoelectronics, D.H. Tomich, L. Grazulis, J.D. Busbee, Air Force Research Laboratory |
| EL+SC-WeP4 Design and Simulation of AlGaN/GaN Heterojunction Bipolar Transistors K.P. Lee, S.J. Pearton, F. Ren, University of Florida, J.-I. Chyi, National Central University, Taiwan, A. Dabiran, P.P. Chow, SVT Associates |
| EL+SC-WeP6 Growth of Gallium Nitride on Silicon Substrate by MOCVD Using Multiple Buffer Layers M.A. Al-Tamimi, D.A. Gulino, Ohio University |
| EL+SC-WeP7 Edge Termination Design and Simulation for Bulk GaN Rectifiers K.H. Baik, University of Florida, Y. Irokawa, Toyota Central Research Laboratories |
| EL+SC-WeP8 Photoelectrochemical Oxidation of GaN and Fabrication of Metal-oxide-semiconductor Structures using Ga-oxide Dielectrics D.J. Fu, T.W. Kang, Dongguk University, Korea |
| EL+SC-WeP9 Relating Interfacial Structure and Composition of Pt/CdZnTe to Radiation Detector Device Performance D.J. Gaspar, M.H. Engelhard, V. Shutthanandan, S. Thevuthasan, Pacific Northwest National Laboratory, A.A. Rouse, C. Szeles, J.-O. Ndap, S.A. Soldner, eV PRODUCTS |