AVS 49th International Symposium
    Electronic Materials and Devices Wednesday Sessions
       Session EL+SC-WeP

Paper EL+SC-WeP9
Relating Interfacial Structure and Composition of Pt/CdZnTe to Radiation Detector Device Performance

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: D.J. Gaspar, Pacific Northwest National Laboratory
Authors: D.J. Gaspar, Pacific Northwest National Laboratory
M.H. Engelhard, Pacific Northwest National Laboratory
V. Shutthanandan, Pacific Northwest National Laboratory
S. Thevuthasan, Pacific Northwest National Laboratory
A.A. Rouse, eV PRODUCTS
C. Szeles, eV PRODUCTS
J.-O. Ndap, eV PRODUCTS
S.A. Soldner, eV PRODUCTS
Correspondent: Click to Email
The interfacial structure and composition of platinum/CdZnTe interfaces was examined to establish correlations between surface and interfacial stoichiometry and radiation detector device performance. X-ray photoelectron spectroscopy (XPS), including depth profiling, and Rutherford backscattering spectroscopy (RBS) were used to determine surface and Pt/CdZnTe interfacial composition. The @super 57@Co spectral response of five CdZnTe detector devices formed by deposition of Pt contacts on a CdZnTe crystal was correlated to the interfacial stoichiometry and the ideality factor. Non-ideal contact behavior was correlated to interfacial oxidation and to the bulk series resistance of the diode. XPS depth profiling revealed differences in the formation of the rectifying contacts, which correlated to device electrical performance.