AVS 49th International Symposium
    Electronic Materials and Devices Wednesday Sessions
       Session EL+SC-WeP

Paper EL+SC-WeP8
Photoelectrochemical Oxidation of GaN and Fabrication of Metal-oxide-semiconductor Structures using Ga-oxide Dielectrics

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: D.J. Fu, Dongguk University, Korea
Authors: D.J. Fu, Dongguk University, Korea
T.W. Kang, Dongguk University, Korea
Correspondent: Click to Email
GaN metal-oxide-semiconductor (MOS) capacitors were fabricated by using Ga oxide formed by photoelectrochemical oxidation of GaN. The electrical properties of the MOS structures as characterized by capacitance-voltage measurement were found to be dependent on the oxidation time and post-treatment. Positive flatband voltage was observed in devices with thin oxide layers indicating the existence of negative oxide charge. Very thin oxide exhibits high capacitance and reverse leakage, which can be reduced by rapid thermal annealing. Passivation of the interface by the annealing is partially responsible for the improvement. Thicker oxide layers exhibit improved electrical properties. Low density of interface states was obtained in the Ga-oxide/GaN structure grown under optimized conditions.