| AVS 49th International Symposium | |
| Electronic Materials and Devices | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EL+SC-TuM1 Epitaxial Growth and Characterization of CdS Layers Grown on InP (001) using Molecular Beam Epitaxy from Atomic Sulfur Beam and Thermally Evaporated Cd J.W. Choi, M.-A. Hasan, A. Bhupathiraju, University of North Carolina at Charlotte |
| 8:40am | EL+SC-TuM2 Structure of InAs/InP Interfaces Formed During Metalorganic Vapor-Phase Epitaxy D.C. Law, Y. Sun, C.H. Li, University of California, Los Angeles, S.B. Visbeck, Siemens & Shell Solar Gmbh, G. Chen, R.F. Hicks, University of California, Los Angeles |
| 9:40am | EL+SC-TuM5 Invited Paper Device Quality III-V Compound Semiconductor Epitaxy on Si Via SiGe Interlayers S.A. Ringel, C.L. Andre, A. Khan, M. Gonzalez, M.K. Hudait, Ohio State University, E.A. Fitzgerald, Massachusetts Institute of Technology, J.A. Carlin, M.T. Currie, C.W. Leitz, T.A. Langdo, AmberWave Systems Corporation |
| 10:20am | EL+SC-TuM7 Interdiffusion, Alloying, and Defect Formation at GaN-Sapphire Interfaces X.L. Sun, S.T. Bradley, G.H. Jessen, L.J. Brillson, The Ohio State University |
| 10:40am | EL+SC-TuM8 Growth and Characterization of Heterjunction Diode Made of AlN on Si(111) K. Sundaresan, M. Jenkins, M.-A. Hasan, University of North Carolina, M. Sardela Jr., University of Illinois |
| 11:00am | EL+SC-TuM9 Observation of a Long-range Strain Field under SiO@sub 2@/Si Interface by using Multi-wave X-ray Diffraction W. Yashiro, National Institute of Advanced Industrial Science and Technology (AIST), Japan, K. Sumitani, T. Takahashi, The University of Tokyo, Japan, Y. Yoda, Japan Synchrotoron Radiation Research Institute (JASRI), K. Takahashi, T. Hattori, Musashi Institute of Technology, Japan |
| 11:20am | EL+SC-TuM10 Measurement of Fermi Level Pinning Kinetics at Si-SiO@sub 2@ Interfaces: Implications for CMOS Transistor Manufacture K. Dev, M.Y.L. Jung, R. Gunawan, R.D. Braatz, E.G. Seebauer, University of Illinois |
| 11:40am | EL+SC-TuM11 Effects of Interface Properties on Degradation and Reliability of CMOS Devices with RPECVD Stacked Oxide/Nitride and Oxynitride Dielectrics G. Lucovsky, Y. Lee, North Carolina State University, Y. Wu, Advanced Micro Devices, C. Bae, J.G. Hong, North Carolina State University |