AVS 49th International Symposium
    Surface Science Thursday Sessions
       Session SS-ThM

Paper SS-ThM1
Electronic Structure of Atomic Chains on Vicinal Silicon

Thursday, November 7, 2002, 8:20 am, Room C-108

Session: Electronic Structure and Stimulated Processes
Presenter: J.N. Crain, University of Wisconsin - Madison
Authors: J.N. Crain, University of Wisconsin - Madison
K.N. Altmann, Synchrotron Radiation Center
Ch. Bromberger, Philipps - University, Germany
A. Kirakosian, University of Wisconsin - Madison
J.-L. Lin, University of Wisconsin - Madison
J.L. McChesney, University of Wisconsin - Madison
F.J. Himpsel, University of Wisconsin - Madison
Correspondent: Click to Email
Surface states on semiconductors provide a unique opportunity to study low-dimensional electron systems. States at the Fermi level are in the band gap and thus do not couple to the bulk states. Thereby, truly two- and one-dimensional metals can be achieved. An example of a 2D metal is Si(111)-@sr@21x@sr@21(Ag + Au) which exhibits two distinct Fermi surfaces associated with Ag and Au.@footnote 1@ By growing chains of gold atoms on Si(111), Si(557), Si(335), and Si(337) we demonstrate the capability of engineering one-dimensional metallic states with varying inter-chain spacings and electron count. In addition, we find a new Si(111)-5x2 Gadolinium reconstruction akin to a lattice of 1D spin chains. Using a combination of STM and angle resolved photoemission we map the real-space and momentum-space electronic structures for these atomic chains. By locking the atoms to the silicon lattice the Peierls transition is overcome. The resulting metallic bands exhibit novel properties including the formation of two half-filled metallic bands in place of a single semiconducting band and a continuous 1D to 2D transition within a single band.@footnote 2,3,4@ The engineering of 1D metals is instrumental in the search for exotic electron behavior like the Luttinger liquid.@footnote 5@ @FootnoteText@ @footnote 1@ J. N. Crain, K. N. Altmann, C. Bromberger, and F. J. Himpsel, Submitted to Phys. Rev. B.@footnote 2@ R. Losio, K. N. Altmann, and F. J. Himpsel, Phys. Rev. Lett. 85, 808 (2000). @footnote 3@ R. Losio, K. N. Altmann, A. Kirakosian, J.-L. Lin, D. Y. Petrovykh, and F. J. Himpsel, Phys. Rev. Lett. 86, 4632 (2001). @footnote 4@ K. N. Altmann, J. N. Crain, A. Kirakosian, J.-L. Lin, D. Y. Petrovykh, F. J. Himpsel, and R. Losio, Phys. Rev. B 64, 035406 (2001).@footnote 5@ J. Voit, Rep. Prog. Phys. 58, 977 (1995).