AVS 49th International Symposium
    Surface Science Thursday Sessions
       Session SS+EL+OF-ThM

Paper SS+EL+OF-ThM8
Adsorption and Reaction of Allyl- and Ethyl-amine on Germanium and Silicon Surfaces

Thursday, November 7, 2002, 10:40 am, Room C-112C

Session: Reactions and Patterning of Organics on Silicon
Presenter: C.M. Greenlief, University of Missouri-Columbia
Authors: P. Prayongpan, University of Missouri-Columbia
C.M. Greenlief, University of Missouri-Columbia
Correspondent: Click to Email
The adsorption and reaction of allyl- and ethyl-amine with the Ge(100) and Si(100) surfaces is examined. These processes are followed by a variety of surface sensitive techniques including ultraviolet photoelectron spectroscopy and temperature programmed desorption. Possible adsorption structures are also examined by theoretical methods. Density functional theory calculations are used to help interpret the photoelectron spectroscopy data. The calculated molecular orbital energies (within Koopmans' approximation) are used to help identify adsorbed molecular species, as well as, reaction intermediates. The interaction of these nitrogen-containing molecules with surface dimmer bonds and ordering of the resulting surface layers will be discussed.